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Charge-trap flash memory using zirconium-nitride-based memristor switches
- Issue Date
- 11-11월-2015
- Publisher
- IOP PUBLISHING LTD
- Keywords
- ZrN; ReCTF; memristor switch; blocking layer; filament
- Citation
- JOURNAL OF PHYSICS D-APPLIED PHYSICS, v.48, no.44
- Indexed
- SCIE
SCOPUS
- Journal Title
- JOURNAL OF PHYSICS D-APPLIED PHYSICS
- Volume
- 48
- Number
- 44
- ISSN
- 0022-3727
- Abstract
- Charge-trap flash (CTF) memory using a zirconium nitride (ZrN)-based memristor switch (MRS) is demonstrated for next-generation nonvolatile memory. This device consists of a metal/MRS/nitride/oxide/silicon (M/MRS/N/O/S) structure so that electrical transport via the ZrN-based MRS layer can be utilized. Compared to previous oxide materials used as conduction paths, the proposed CTF device with a ZrN-based MRS exhibits a faster program/erase switching speed (20 ns/7 ns), along with comparable endurance and retention properties.
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Collections - College of Engineering > School of Electrical Engineering > 1. Journal Articles
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