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600 GHz InP HBT frequency multiplier

Authors
Choi, S. H.Urteaga, M.Kim, M.
Issue Date
5-Nov-2015
Publisher
INST ENGINEERING TECHNOLOGY-IET
Citation
ELECTRONICS LETTERS, v.51, no.23, pp.1928 - 1929
Indexed
SCIE
SCOPUS
Journal Title
ELECTRONICS LETTERS
Volume
51
Number
23
Start Page
1928
End Page
1929
URI
https://scholar.korea.ac.kr/handle/2021.sw.korea/91927
DOI
10.1049/el.2015.2916
ISSN
0013-5194
Abstract
A 600 GHz monolithic frequency multiplier circuit fabricated using 0.25 mu m InP HBT (heterojunction bipolar technology) technology is reported. The multiplier uses two 6 mu m finger devices in common-base push-push configuration to obtain extremely simple matching networks. Measurements using on-wafer RF probes indicate maximum output power of -8.3 dBm at 590 GHz with a wide operation bandwidth of better than 50 GHz.
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