Silicon Surface Modification Using C4F8+O-2 Plasma for Nano-Imprint Lithography

Abstract

The investigation of C4F8 + O-2 feed gas composition on both plasma parameters and plasma treated silicon surface characteristics was carried out. The combination of plasma diagnostics by Langmuir probes and plasma modeling indicated that an increase in O-2 mixing ratio results in monotonically decreasing densities of CFx (x = 1-3) radicals as well as in non-monotonic behavior of F atom density. The surface characterization by X-ray photoelectron spectroscopy and contact angle measurements showed that the C4F8 + O-2 mixtures with less than 60% O-2 result in modification of Si surfaces due to the deposition of the FC polymer films while the change of O-2 mixing ratio in the range of 30%-60% provides an effective adjustment of the surface characteristics such as surface energy, contact angle, etc.