Bipolar Switching Behavior of ZnO (x) Thin Films Deposited by Metalorganic Chemical Vapor Deposition at Various Growth Temperatures
- Authors
- Bae, Seonho; Kim, Dae-Sik; Jung, Seojoo; Jeong, Woo Seop; Lee, Jee Eun; Cho, Seunghee; Park, Junsung; Byun, Dongjin
- Issue Date
- 11월-2015
- Publisher
- SPRINGER
- Keywords
- ZnO; bipolar switching behavior; metalorganic chemical vapor deposition; Rutherford backscattering spectroscopy (RBS); x-ray photoelectron spectroscopy (XPS)
- Citation
- JOURNAL OF ELECTRONIC MATERIALS, v.44, no.11, pp.4175 - 4181
- Indexed
- SCIE
SCOPUS
- Journal Title
- JOURNAL OF ELECTRONIC MATERIALS
- Volume
- 44
- Number
- 11
- Start Page
- 4175
- End Page
- 4181
- URI
- https://scholar.korea.ac.kr/handle/2021.sw.korea/92034
- DOI
- 10.1007/s11664-015-3935-x
- ISSN
- 0361-5235
- Abstract
- The bipolar resistive switching behaviors of ZnO films grown at various temperatures by metalorganic chemical vapor deposition have been investigated. The ZnO films were grown on Pt/Ti/SiO2/Si(100) substrate, and the ZnO growth temperature was varied from 300A degrees C to 500A degrees C in steps of 100A degrees C. Rutherford backscattering spectroscopy analysis results showed that the chemical compositions of the ZnO films were oxygen-poor Zn1O0.9 at 300A degrees C, stoichiometric Zn1O1 at 400A degrees C, and oxygen-rich Zn1O1.3 at 500A degrees C. Resistive switching properties were observed in the ZnO films grown at 300A degrees C and 400A degrees C. In contrast, high current, without switching properties, was found in the ZnO film grown at 500A degrees C. The ZnO film grown at 500A degrees C had higher concentration of both nonlattice oxygen (4.95%) and oxygen vacancy (3.23%) than those grown at 300A degrees C or 400A degrees C. The resistive switching behaviors of ZnO films are related to the ZnO growth temperature via the relative amount of oxygen vacancies in the film. Pt/ZnO/Pt devices showed asymmetric resistive switching with narrow dispersion of switching voltage.
- Files in This Item
- There are no files associated with this item.
- Appears in
Collections - College of Engineering > Department of Materials Science and Engineering > 1. Journal Articles
Items in ScholarWorks are protected by copyright, with all rights reserved, unless otherwise indicated.