Diodelike Bipolar Resistive Switching, High-Performance, and Ultralow Power Characteristics in GaO/SiNx:O Bilayer Structure
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Lee, Tae Ho | - |
dc.contributor.author | Park, Ju Hyun | - |
dc.contributor.author | Kim, Tae Geun | - |
dc.date.accessioned | 2021-09-04T11:58:42Z | - |
dc.date.available | 2021-09-04T11:58:42Z | - |
dc.date.created | 2021-06-18 | - |
dc.date.issued | 2015-10 | - |
dc.identifier.issn | 0741-3106 | - |
dc.identifier.uri | https://scholar.korea.ac.kr/handle/2021.sw.korea/92310 | - |
dc.description.abstract | In this letter, we propose a gallium oxide/oxygen doped silicon nitride-based resistive switching device for removing sneak-path currents in high-density crossbar array structures. The device exhibited diodelike characteristics owing to a simple Schottky contact and ultralow power operating behavior (similar to 0.5 V, 1 mu A) without any forming process. Both ON/OFF and rectification ratios exceeded 10(3), and the fastest ac-pulse program (erase) time was 50 (80) ns. The ac-pulse program and erase tests showed 10(5) cycle endurance without degradation, and dc test showed over 102 cycle endurance. Furthermore, data retention time was >10(5) s at room temperature. | - |
dc.language | English | - |
dc.language.iso | en | - |
dc.publisher | IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC | - |
dc.subject | HIGH-DENSITY | - |
dc.subject | OXIDE | - |
dc.title | Diodelike Bipolar Resistive Switching, High-Performance, and Ultralow Power Characteristics in GaO/SiNx:O Bilayer Structure | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Kim, Tae Geun | - |
dc.identifier.doi | 10.1109/LED.2015.2470515 | - |
dc.identifier.scopusid | 2-s2.0-84952652755 | - |
dc.identifier.wosid | 000362288700011 | - |
dc.identifier.bibliographicCitation | IEEE ELECTRON DEVICE LETTERS, v.36, no.10, pp.1024 - 1026 | - |
dc.relation.isPartOf | IEEE ELECTRON DEVICE LETTERS | - |
dc.citation.title | IEEE ELECTRON DEVICE LETTERS | - |
dc.citation.volume | 36 | - |
dc.citation.number | 10 | - |
dc.citation.startPage | 1024 | - |
dc.citation.endPage | 1026 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Engineering | - |
dc.relation.journalWebOfScienceCategory | Engineering, Electrical & Electronic | - |
dc.subject.keywordPlus | HIGH-DENSITY | - |
dc.subject.keywordPlus | OXIDE | - |
dc.subject.keywordAuthor | Bilayer | - |
dc.subject.keywordAuthor | diodelike | - |
dc.subject.keywordAuthor | gallium oxide | - |
dc.subject.keywordAuthor | resistive random access memory | - |
dc.subject.keywordAuthor | silicon nitride | - |
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