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Diodelike Bipolar Resistive Switching, High-Performance, and Ultralow Power Characteristics in GaO/SiNx:O Bilayer Structure
- Authors
- Lee, Tae Ho; Park, Ju Hyun; Kim, Tae Geun
- Issue Date
- 10월-2015
- Publisher
- IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
- Keywords
- Bilayer; diodelike; gallium oxide; resistive random access memory; silicon nitride
- Citation
- IEEE ELECTRON DEVICE LETTERS, v.36, no.10, pp.1024 - 1026
- Indexed
- SCIE
SCOPUS
- Journal Title
- IEEE ELECTRON DEVICE LETTERS
- Volume
- 36
- Number
- 10
- Start Page
- 1024
- End Page
- 1026
- ISSN
- 0741-3106
- Abstract
- In this letter, we propose a gallium oxide/oxygen doped silicon nitride-based resistive switching device for removing sneak-path currents in high-density crossbar array structures. The device exhibited diodelike characteristics owing to a simple Schottky contact and ultralow power operating behavior (similar to 0.5 V, 1 mu A) without any forming process. Both ON/OFF and rectification ratios exceeded 10(3), and the fastest ac-pulse program (erase) time was 50 (80) ns. The ac-pulse program and erase tests showed 10(5) cycle endurance without degradation, and dc test showed over 102 cycle endurance. Furthermore, data retention time was >10(5) s at room temperature.
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