Design of electron blocking layers for improving internal quantum efficiency of InGaN/AlGaN-based ultraviolet light-emitting diodes
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Park, Tae Hoon | - |
dc.contributor.author | Kim, Tae Geun | - |
dc.date.accessioned | 2021-09-04T12:55:12Z | - |
dc.date.available | 2021-09-04T12:55:12Z | - |
dc.date.created | 2021-06-18 | - |
dc.date.issued | 2015-09 | - |
dc.identifier.issn | 0947-8396 | - |
dc.identifier.uri | https://scholar.korea.ac.kr/handle/2021.sw.korea/92539 | - |
dc.description.abstract | In this paper, we designed and simulated InGaN/AlGaN-based near-ultraviolet light-emitting diode (NUV LED) epi-structures to obtain high internal quantum efficiency and low efficiency droop. When the conventional epi-structure of an last quantum barrier and an electron blocking layer (EBL) was replaced with a graded last quantum barrier and multi-step EBLs, the NUV LED showed 35 % higher internal quantum efficiency and 25 % more suppression of efficiency droop than the conventional NUV LED. Furthermore, a detailed study of the grading effect of the EBL revealed that 10-step EBLs increase performance when compared to other structures. These results are attributed to the polarization-induced effect, which reduces the electron leakage and increases the hole injection efficiency. | - |
dc.language | English | - |
dc.language.iso | en | - |
dc.publisher | SPRINGER HEIDELBERG | - |
dc.subject | PERFORMANCE ENHANCEMENT | - |
dc.subject | HOLE-INJECTION | - |
dc.subject | BLUE LEDS | - |
dc.subject | POLARIZATION | - |
dc.subject | BARRIER | - |
dc.subject | DROOP | - |
dc.title | Design of electron blocking layers for improving internal quantum efficiency of InGaN/AlGaN-based ultraviolet light-emitting diodes | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Kim, Tae Geun | - |
dc.identifier.doi | 10.1007/s00339-015-9345-3 | - |
dc.identifier.scopusid | 2-s2.0-84938983944 | - |
dc.identifier.wosid | 000359435900006 | - |
dc.identifier.bibliographicCitation | APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, v.120, no.3, pp.841 - 846 | - |
dc.relation.isPartOf | APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING | - |
dc.citation.title | APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING | - |
dc.citation.volume | 120 | - |
dc.citation.number | 3 | - |
dc.citation.startPage | 841 | - |
dc.citation.endPage | 846 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.subject.keywordPlus | PERFORMANCE ENHANCEMENT | - |
dc.subject.keywordPlus | HOLE-INJECTION | - |
dc.subject.keywordPlus | BLUE LEDS | - |
dc.subject.keywordPlus | POLARIZATION | - |
dc.subject.keywordPlus | BARRIER | - |
dc.subject.keywordPlus | DROOP | - |
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