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Design of electron blocking layers for improving internal quantum efficiency of InGaN/AlGaN-based ultraviolet light-emitting diodes

Authors
Park, Tae HoonKim, Tae Geun
Issue Date
9월-2015
Publisher
SPRINGER HEIDELBERG
Citation
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, v.120, no.3, pp.841 - 846
Indexed
SCIE
SCOPUS
Journal Title
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING
Volume
120
Number
3
Start Page
841
End Page
846
URI
https://scholar.korea.ac.kr/handle/2021.sw.korea/92539
DOI
10.1007/s00339-015-9345-3
ISSN
0947-8396
Abstract
In this paper, we designed and simulated InGaN/AlGaN-based near-ultraviolet light-emitting diode (NUV LED) epi-structures to obtain high internal quantum efficiency and low efficiency droop. When the conventional epi-structure of an last quantum barrier and an electron blocking layer (EBL) was replaced with a graded last quantum barrier and multi-step EBLs, the NUV LED showed 35 % higher internal quantum efficiency and 25 % more suppression of efficiency droop than the conventional NUV LED. Furthermore, a detailed study of the grading effect of the EBL revealed that 10-step EBLs increase performance when compared to other structures. These results are attributed to the polarization-induced effect, which reduces the electron leakage and increases the hole injection efficiency.
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공과대학 (전기전자공학부)
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