Effect of deposition pressure on the electrical properties of nitrogen-doped amorphous carbon films
- Authors
- Oh, Hyungon; Cho, Kyoungah; Kim, Sangsig
- Issue Date
- 8월-2015
- Publisher
- KOREAN PHYSICAL SOC
- Keywords
- Nitrogen-doped amorphous carbon; DC magnetron sputtering; Bonding state
- Citation
- JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.67, no.4, pp.638 - 642
- Indexed
- SCIE
SCOPUS
KCI
- Journal Title
- JOURNAL OF THE KOREAN PHYSICAL SOCIETY
- Volume
- 67
- Number
- 4
- Start Page
- 638
- End Page
- 642
- URI
- https://scholar.korea.ac.kr/handle/2021.sw.korea/92844
- DOI
- 10.3938/jkps.67.638
- ISSN
- 0374-4884
- Abstract
- In this study, we investigate the effect of the deposition pressure on the electrical properties of nitrogen-doped amorphous carbon (a-C:N) films deposited by using an unbalanced DC magnetron sputtering method. As the deposition pressure is decreased from 9 to 1 mTorr, the resistivity decreases from 7.88 to 2.68 x 10 (-2) Omega center dot cm while the deposition rate increases from 3.5 to 4.4 nm/min. The decrease in resistivity is caused by increases in both the carrier concentration and mobility. As the pressure is decreased, the carrier concentration increases from 1.9 x 10(14) to 7.8 x 10(20) cm (-3), and the mobility increases from 0.01 to 0.3 cm(2)/V center dot sec. X-ray photoelectron spectroscopy and Raman spectroscopy reveal that the improved electrical properties of the film deposited at a lower pressure are the result of a higher fraction of sp(2) bonding.
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