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Surface Passivation of Germanium Using SF6 Plasma to Reduce Source/Drain Contact Resistance in Germanium n-FET
- Authors
- Kim, Gwang-Sik; Kim, Seung-Hwan; Kim, Jeong-Kyu; Shin, Changhwan; Park, Jin-Hong; Saraswat, Krishna C.; Cho, Byung Jin; Yu, Hyun-Yong
- Issue Date
- Aug-2015
- Publisher
- IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
- Keywords
- Contact resistance; Fermi-level unpinning; germanium; SF6 plasma; surface passivation
- Citation
- IEEE ELECTRON DEVICE LETTERS, v.36, no.8, pp.745 - 747
- Indexed
- SCIE
SCOPUS
- Journal Title
- IEEE ELECTRON DEVICE LETTERS
- Volume
- 36
- Number
- 8
- Start Page
- 745
- End Page
- 747
- ISSN
- 0741-3106
- Abstract
- We demonstrate Fermi-level unpinning and contact resistance reduction by surface passivation using SF6 plasma treatment of a metal/germanium (Ge) contact. A specific contact resistivity (rho(c)) of 1.14 x 10(-3) Omega . cm(2) and 0.31 eV of Schottky barrier height is achieved for a Ti/SF6-treated n-type Ge (n-Ge) (N-d = 1 x 10(17) cm(-3)) contact, exhibiting 1700 times rho(c) reduction from a Ti/nontreated n-Ge contact. A convenient and effective passivation process of the Ge surface is presented to alleviate Fermi-level pinning at metal/Ge contact and lower source/drain contact resistance of Ge n-type field-effect transistors.
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Related Researcher
- Yu, Hyun Yong
- College of Engineering (School of Electrical Engineering)