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Fabrication and electrical properties of single wall carbon nanotube channel and graphene electrode based transistors arrays
- Authors
- Seo, M.; Kim, H.; Kim, Y. H.; Na, J.; Lee, B. J.; Kim, J. J.; Lee, I.; Yun, H.; McAllister, K.; Kim, K. S.; Jeong, G. H.; Kim, G. T.; Lee, S. W.
- Issue Date
- 20-Jul-2015
- Publisher
- AMER INST PHYSICS
- Citation
- APPLIED PHYSICS LETTERS, v.107, no.3
- Indexed
- SCIE
SCOPUS
- Journal Title
- APPLIED PHYSICS LETTERS
- Volume
- 107
- Number
- 3
- ISSN
- 0003-6951
- Abstract
- A transistor structure composed of an individual single-walled carbon nanotube (SWNT) channel with a graphene electrode was demonstrated. The integrated arrays of transistor devices were prepared by transferring patterned graphene electrode patterns on top of the aligned SWNT along one direction. Both single and multi layer graphene were used for the electrode materials; typical p-type transistor and Schottky diode behavior were observed, respectively. Based on our fabrication method and device performances, several issues are suggested and discussed to improve the device reliability and finally to realize all carbon based future electronic systems. (C) 2015 AIP Publishing LLC.
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Related Researcher
- Kim, Gyu Tae
- College of Engineering (School of Electrical Engineering)