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Fabrication and electrical properties of single wall carbon nanotube channel and graphene electrode based transistors arrays

Authors
Seo, M.Kim, H.Kim, Y. H.Na, J.Lee, B. J.Kim, J. J.Lee, I.Yun, H.McAllister, K.Kim, K. S.Jeong, G. H.Kim, G. T.Lee, S. W.
Issue Date
20-7월-2015
Publisher
AMER INST PHYSICS
Citation
APPLIED PHYSICS LETTERS, v.107, no.3
Indexed
SCIE
SCOPUS
Journal Title
APPLIED PHYSICS LETTERS
Volume
107
Number
3
URI
https://scholar.korea.ac.kr/handle/2021.sw.korea/92998
DOI
10.1063/1.4927054
ISSN
0003-6951
Abstract
A transistor structure composed of an individual single-walled carbon nanotube (SWNT) channel with a graphene electrode was demonstrated. The integrated arrays of transistor devices were prepared by transferring patterned graphene electrode patterns on top of the aligned SWNT along one direction. Both single and multi layer graphene were used for the electrode materials; typical p-type transistor and Schottky diode behavior were observed, respectively. Based on our fabrication method and device performances, several issues are suggested and discussed to improve the device reliability and finally to realize all carbon based future electronic systems. (C) 2015 AIP Publishing LLC.
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Kim, Gyu Tae
공과대학 (전기전자공학부)
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