Negative Capacitance in Organic/Ferroelectric Capacitor to Implement Steep Switching MOS Devices
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Jo, Jaesung | - |
dc.contributor.author | Choi, Woo Young | - |
dc.contributor.author | Park, Jung-Dong | - |
dc.contributor.author | Shim, Jae Won | - |
dc.contributor.author | Yu, Hyun-Yong | - |
dc.contributor.author | Shin, Changhwan | - |
dc.date.accessioned | 2021-09-04T14:29:31Z | - |
dc.date.available | 2021-09-04T14:29:31Z | - |
dc.date.created | 2021-06-16 | - |
dc.date.issued | 2015-07 | - |
dc.identifier.issn | 1530-6984 | - |
dc.identifier.uri | https://scholar.korea.ac.kr/handle/2021.sw.korea/93096 | - |
dc.description.abstract | Because of the "Boltzmann tyranny" (i.e., the non-scalability of thermal voltage), a certain minimum gate voltage in metal oxide semiconductor (MOS) devices is required for a 10-fold increase in drain-to-source current. The subthreshold slope (SS) in MOS devices is, at best, 60 mV/decade at 300 K. Negative capacitance in organic/ferroelectric materials is proposed in order to address this physical limitation in MOS technology. Here, we experimentally demonstrate the steep switching behavior of a MOS device-that is, SS similar to 18 mV/decade (much less than 60 mV/decade) at 300 K-by taking advantage of negative capacitance in a MOS gate stack. This negative capacitance, originating from the dynamics of the stored energy in a phase transition of a ferroelectric material, can achieve the step-up conversion of internal voltage (i.e., internal voltage amplification in a MOS device). With the aid of a series-connected negative capacitor as an assistive device, the surface potential in the MOS device becomes higher than the applied gate voltage, so that a SS of 18 mV/decade at 300 K is reliably observed. | - |
dc.language | English | - |
dc.language.iso | en | - |
dc.publisher | AMER CHEMICAL SOC | - |
dc.title | Negative Capacitance in Organic/Ferroelectric Capacitor to Implement Steep Switching MOS Devices | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Yu, Hyun-Yong | - |
dc.identifier.doi | 10.1021/acs.nanolett.5b01130 | - |
dc.identifier.scopusid | 2-s2.0-84936882723 | - |
dc.identifier.wosid | 000357964100047 | - |
dc.identifier.bibliographicCitation | NANO LETTERS, v.15, no.7, pp.4553 - 4556 | - |
dc.relation.isPartOf | NANO LETTERS | - |
dc.citation.title | NANO LETTERS | - |
dc.citation.volume | 15 | - |
dc.citation.number | 7 | - |
dc.citation.startPage | 4553 | - |
dc.citation.endPage | 4556 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Chemistry | - |
dc.relation.journalResearchArea | Science & Technology - Other Topics | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Chemistry, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Chemistry, Physical | - |
dc.relation.journalWebOfScienceCategory | Nanoscience & Nanotechnology | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.relation.journalWebOfScienceCategory | Physics, Condensed Matter | - |
dc.subject.keywordAuthor | negative capacitance | - |
dc.subject.keywordAuthor | steep switching | - |
dc.subject.keywordAuthor | metal-oxide-semiconductor field-effect transistor (MOSFET) | - |
dc.subject.keywordAuthor | ferroelectrics | - |
Items in ScholarWorks are protected by copyright, with all rights reserved, unless otherwise indicated.
145 Anam-ro, Seongbuk-gu, Seoul, 02841, Korea+82-2-3290-2963
COPYRIGHT © 2021 Korea University. All Rights Reserved.
Certain data included herein are derived from the © Web of Science of Clarivate Analytics. All rights reserved.
You may not copy or re-distribute this material in whole or in part without the prior written consent of Clarivate Analytics.