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Negative Capacitance in Organic/Ferroelectric Capacitor to Implement Steep Switching MOS Devices

Authors
Jo, JaesungChoi, Woo YoungPark, Jung-DongShim, Jae WonYu, Hyun-YongShin, Changhwan
Issue Date
7월-2015
Publisher
AMER CHEMICAL SOC
Keywords
negative capacitance; steep switching; metal-oxide-semiconductor field-effect transistor (MOSFET); ferroelectrics
Citation
NANO LETTERS, v.15, no.7, pp.4553 - 4556
Indexed
SCIE
SCOPUS
Journal Title
NANO LETTERS
Volume
15
Number
7
Start Page
4553
End Page
4556
URI
https://scholar.korea.ac.kr/handle/2021.sw.korea/93096
DOI
10.1021/acs.nanolett.5b01130
ISSN
1530-6984
Abstract
Because of the "Boltzmann tyranny" (i.e., the non-scalability of thermal voltage), a certain minimum gate voltage in metal oxide semiconductor (MOS) devices is required for a 10-fold increase in drain-to-source current. The subthreshold slope (SS) in MOS devices is, at best, 60 mV/decade at 300 K. Negative capacitance in organic/ferroelectric materials is proposed in order to address this physical limitation in MOS technology. Here, we experimentally demonstrate the steep switching behavior of a MOS device-that is, SS similar to 18 mV/decade (much less than 60 mV/decade) at 300 K-by taking advantage of negative capacitance in a MOS gate stack. This negative capacitance, originating from the dynamics of the stored energy in a phase transition of a ferroelectric material, can achieve the step-up conversion of internal voltage (i.e., internal voltage amplification in a MOS device). With the aid of a series-connected negative capacitor as an assistive device, the surface potential in the MOS device becomes higher than the applied gate voltage, so that a SS of 18 mV/decade at 300 K is reliably observed.
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공과대학 (전기전자공학부)
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