Subthreshold swing characteristics of nanowire tunneling FETs with variation in gate coverage and channel diameter
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Kim, Minsuk | - |
dc.contributor.author | Jeon, Youngin | - |
dc.contributor.author | Kim, Yoonjoong | - |
dc.contributor.author | Kim, Sangsig | - |
dc.date.accessioned | 2021-09-04T14:48:50Z | - |
dc.date.available | 2021-09-04T14:48:50Z | - |
dc.date.created | 2021-06-16 | - |
dc.date.issued | 2015-07 | - |
dc.identifier.issn | 1567-1739 | - |
dc.identifier.uri | https://scholar.korea.ac.kr/handle/2021.sw.korea/93150 | - |
dc.description.abstract | In this study, we demonstrate the simulated subthreshold swing (SS) of silicon nanowire tunneling field-effect transistors (NWTFETs) by varying both the channel diameter from 10 nm to 40 nm and the gate coverage ratio from 30% to 100%. Our simulation work reveals that both a decrease in the channel diameter and an increase in the gate coverage ratio contribute to a reduction in the SS. Additionally, our work shows that the magnitude of the on-current depends linearly on the gate coverage ratio and that the drain current increases with a decrease in the channel diameter. Thus, an NWTFET with a channel diameter of 10 nm and a gate coverage ratio of 100% exhibits superior electrical characteristics over other silicon NWTFETs in that the NWTFET shows a point SS of 22.7 mV/dec, an average SS of 56.3 mV/dec, an on/off current ratio of similar to 10(13), and an on-current of similar to 10(-5) A/mu m. (C) 2015 Elsevier B.V. All rights reserved. | - |
dc.language | English | - |
dc.language.iso | en | - |
dc.publisher | ELSEVIER | - |
dc.subject | PERFORMANCE | - |
dc.title | Subthreshold swing characteristics of nanowire tunneling FETs with variation in gate coverage and channel diameter | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Kim, Sangsig | - |
dc.identifier.doi | 10.1016/j.cap.2015.04.024 | - |
dc.identifier.scopusid | 2-s2.0-84929484179 | - |
dc.identifier.wosid | 000355003500005 | - |
dc.identifier.bibliographicCitation | CURRENT APPLIED PHYSICS, v.15, no.7, pp.780 - 783 | - |
dc.relation.isPartOf | CURRENT APPLIED PHYSICS | - |
dc.citation.title | CURRENT APPLIED PHYSICS | - |
dc.citation.volume | 15 | - |
dc.citation.number | 7 | - |
dc.citation.startPage | 780 | - |
dc.citation.endPage | 783 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.identifier.kciid | ART002014554 | - |
dc.description.journalClass | 1 | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.description.journalRegisteredClass | kci | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.subject.keywordPlus | PERFORMANCE | - |
dc.subject.keywordAuthor | Nanowire | - |
dc.subject.keywordAuthor | Tunneling field effect transistor (TFET) | - |
dc.subject.keywordAuthor | Subthreshold swing (SS) | - |
dc.subject.keywordAuthor | Gate coverage | - |
dc.subject.keywordAuthor | Sub-60 mV/dec | - |
Items in ScholarWorks are protected by copyright, with all rights reserved, unless otherwise indicated.
(02841) 서울특별시 성북구 안암로 14502-3290-1114
COPYRIGHT © 2021 Korea University. All Rights Reserved.
Certain data included herein are derived from the © Web of Science of Clarivate Analytics. All rights reserved.
You may not copy or re-distribute this material in whole or in part without the prior written consent of Clarivate Analytics.