Subthreshold swing characteristics of nanowire tunneling FETs with variation in gate coverage and channel diameter
- Authors
- Kim, Minsuk; Jeon, Youngin; Kim, Yoonjoong; Kim, Sangsig
- Issue Date
- 7월-2015
- Publisher
- ELSEVIER
- Keywords
- Nanowire; Tunneling field effect transistor (TFET); Subthreshold swing (SS); Gate coverage; Sub-60 mV/dec
- Citation
- CURRENT APPLIED PHYSICS, v.15, no.7, pp.780 - 783
- Indexed
- SCIE
SCOPUS
KCI
- Journal Title
- CURRENT APPLIED PHYSICS
- Volume
- 15
- Number
- 7
- Start Page
- 780
- End Page
- 783
- URI
- https://scholar.korea.ac.kr/handle/2021.sw.korea/93150
- DOI
- 10.1016/j.cap.2015.04.024
- ISSN
- 1567-1739
- Abstract
- In this study, we demonstrate the simulated subthreshold swing (SS) of silicon nanowire tunneling field-effect transistors (NWTFETs) by varying both the channel diameter from 10 nm to 40 nm and the gate coverage ratio from 30% to 100%. Our simulation work reveals that both a decrease in the channel diameter and an increase in the gate coverage ratio contribute to a reduction in the SS. Additionally, our work shows that the magnitude of the on-current depends linearly on the gate coverage ratio and that the drain current increases with a decrease in the channel diameter. Thus, an NWTFET with a channel diameter of 10 nm and a gate coverage ratio of 100% exhibits superior electrical characteristics over other silicon NWTFETs in that the NWTFET shows a point SS of 22.7 mV/dec, an average SS of 56.3 mV/dec, an on/off current ratio of similar to 10(13), and an on-current of similar to 10(-5) A/mu m. (C) 2015 Elsevier B.V. All rights reserved.
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