Impact-Ionization and Tunneling FET Characteristics of Dual-Functional Devices With Partially Covered Intrinsic Regions
DC Field | Value | Language |
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dc.contributor.author | Kim, Minsuk | - |
dc.contributor.author | Jeon, Youngin | - |
dc.contributor.author | Kim, Yoonjoong | - |
dc.contributor.author | Kim, Sangsig | - |
dc.date.accessioned | 2021-09-04T14:52:25Z | - |
dc.date.available | 2021-09-04T14:52:25Z | - |
dc.date.created | 2021-06-16 | - |
dc.date.issued | 2015-07 | - |
dc.identifier.issn | 1536-125X | - |
dc.identifier.uri | https://scholar.korea.ac.kr/handle/2021.sw.korea/93177 | - |
dc.description.abstract | Dual-functional devices based on gated p-i-n diodes are proposed in this simulation study. The dual-functional devices function not only as n-channel tunneling field-effect transistors (n-TFETs) but also as p-channel impact-ionization FETs (p-IFETs), depending on the bias conditions. In this study, the I-V characteristics, subthreshold swing (SS), ON/OFF current ratio (I-on /I-off), and band diagram are analyzed using a device simulator (Silvaco Atlas), and the features of the n-TFETs and the p-IFETs are extracted from the simulated data. The n-TFETs exhibit high I-on /I-off of similar to 10(11) and a sub-60-mV/dec SS, and the p-IFETs yield extremely low SS of as small as 8.57 mV/dec. Our approach is one of the useful methods to design multifunctional electronics for lowering the power consumption. | - |
dc.language | English | - |
dc.language.iso | en | - |
dc.publisher | IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC | - |
dc.subject | FIELD-EFFECT-TRANSISTORS | - |
dc.subject | MOS I-MOS | - |
dc.subject | THRESHOLD VOLTAGE | - |
dc.subject | DEFINITION | - |
dc.title | Impact-Ionization and Tunneling FET Characteristics of Dual-Functional Devices With Partially Covered Intrinsic Regions | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Kim, Sangsig | - |
dc.identifier.doi | 10.1109/TNANO.2015.2427453 | - |
dc.identifier.scopusid | 2-s2.0-84949484872 | - |
dc.identifier.wosid | 000357821500009 | - |
dc.identifier.bibliographicCitation | IEEE TRANSACTIONS ON NANOTECHNOLOGY, v.14, no.4, pp.633 - 637 | - |
dc.relation.isPartOf | IEEE TRANSACTIONS ON NANOTECHNOLOGY | - |
dc.citation.title | IEEE TRANSACTIONS ON NANOTECHNOLOGY | - |
dc.citation.volume | 14 | - |
dc.citation.number | 4 | - |
dc.citation.startPage | 633 | - |
dc.citation.endPage | 637 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Engineering | - |
dc.relation.journalResearchArea | Science & Technology - Other Topics | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Engineering, Electrical & Electronic | - |
dc.relation.journalWebOfScienceCategory | Nanoscience & Nanotechnology | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.subject.keywordPlus | FIELD-EFFECT-TRANSISTORS | - |
dc.subject.keywordPlus | MOS I-MOS | - |
dc.subject.keywordPlus | THRESHOLD VOLTAGE | - |
dc.subject.keywordPlus | DEFINITION | - |
dc.subject.keywordAuthor | Dual function | - |
dc.subject.keywordAuthor | impact ionization | - |
dc.subject.keywordAuthor | integration | - |
dc.subject.keywordAuthor | sub-60 mV/dec | - |
dc.subject.keywordAuthor | tunneling | - |
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