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Impact-Ionization and Tunneling FET Characteristics of Dual-Functional Devices With Partially Covered Intrinsic Regions

Authors
Kim, MinsukJeon, YounginKim, YoonjoongKim, Sangsig
Issue Date
7월-2015
Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
Keywords
Dual function; impact ionization; integration; sub-60 mV/dec; tunneling
Citation
IEEE TRANSACTIONS ON NANOTECHNOLOGY, v.14, no.4, pp.633 - 637
Indexed
SCIE
SCOPUS
Journal Title
IEEE TRANSACTIONS ON NANOTECHNOLOGY
Volume
14
Number
4
Start Page
633
End Page
637
URI
https://scholar.korea.ac.kr/handle/2021.sw.korea/93177
DOI
10.1109/TNANO.2015.2427453
ISSN
1536-125X
Abstract
Dual-functional devices based on gated p-i-n diodes are proposed in this simulation study. The dual-functional devices function not only as n-channel tunneling field-effect transistors (n-TFETs) but also as p-channel impact-ionization FETs (p-IFETs), depending on the bias conditions. In this study, the I-V characteristics, subthreshold swing (SS), ON/OFF current ratio (I-on /I-off), and band diagram are analyzed using a device simulator (Silvaco Atlas), and the features of the n-TFETs and the p-IFETs are extracted from the simulated data. The n-TFETs exhibit high I-on /I-off of similar to 10(11) and a sub-60-mV/dec SS, and the p-IFETs yield extremely low SS of as small as 8.57 mV/dec. Our approach is one of the useful methods to design multifunctional electronics for lowering the power consumption.
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공과대학 (전기전자공학부)
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