Controllable and air-stable graphene n-type doping on phosphosilicate glass for intrinsic graphene
DC Field | Value | Language |
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dc.contributor.author | Park, Hyung-Youl | - |
dc.contributor.author | Yoon, Jin-Sang | - |
dc.contributor.author | Jeon, Jeaho | - |
dc.contributor.author | Kim, Jinok | - |
dc.contributor.author | Jo, Seo-Hyeon | - |
dc.contributor.author | Yu, Hyun-Yong | - |
dc.contributor.author | Lee, Sungjoo | - |
dc.contributor.author | Park, Jin-Hong | - |
dc.date.accessioned | 2021-09-04T14:58:05Z | - |
dc.date.available | 2021-09-04T14:58:05Z | - |
dc.date.created | 2021-06-16 | - |
dc.date.issued | 2015-07 | - |
dc.identifier.issn | 1566-1199 | - |
dc.identifier.uri | https://scholar.korea.ac.kr/handle/2021.sw.korea/93220 | - |
dc.description.abstract | We proposed and investigated a controllable air-stable graphene n-doping method on phosphosilicate glass (PSG) to achieve intrinsic graphene. Through Raman, XPS, and AFM analyses, it was confirmed that the initially p-type doped graphene was recovered to intrinsic graphene through n-type doping phenomenon. The n-doping control was accomplished by adjusting the concentration of the out-diffused P2O5 molecules from the PSG layer. In particular, a larger amount of P2O5 molecules and a smoother PSG surface were achieved after the higher temperature annealing, consequently yielding a larger doping impact on the graphene layer. Finally, a very small Dirac point shift (1-3 V) was observed after 96 h of air exposure, compared to the degree of shift by the n-doping effect (17-36 V), demonstrating that this n-doping method is fairly stable in air. (C) 2015 Elsevier B.V. All rights reserved. | - |
dc.language | English | - |
dc.language.iso | en | - |
dc.publisher | ELSEVIER SCIENCE BV | - |
dc.subject | CHEMICAL-VAPOR-DEPOSITION | - |
dc.subject | HEXAGONAL BORON-NITRIDE | - |
dc.subject | DIRAC POINT | - |
dc.subject | LARGE-SCALE | - |
dc.subject | FILMS | - |
dc.subject | TRANSISTOR | - |
dc.subject | TRANSPORT | - |
dc.title | Controllable and air-stable graphene n-type doping on phosphosilicate glass for intrinsic graphene | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Yu, Hyun-Yong | - |
dc.identifier.doi | 10.1016/j.orgel.2015.03.039 | - |
dc.identifier.scopusid | 2-s2.0-84926158638 | - |
dc.identifier.wosid | 000353334800019 | - |
dc.identifier.bibliographicCitation | ORGANIC ELECTRONICS, v.22, pp.117 - 121 | - |
dc.relation.isPartOf | ORGANIC ELECTRONICS | - |
dc.citation.title | ORGANIC ELECTRONICS | - |
dc.citation.volume | 22 | - |
dc.citation.startPage | 117 | - |
dc.citation.endPage | 121 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.subject.keywordPlus | CHEMICAL-VAPOR-DEPOSITION | - |
dc.subject.keywordPlus | HEXAGONAL BORON-NITRIDE | - |
dc.subject.keywordPlus | DIRAC POINT | - |
dc.subject.keywordPlus | LARGE-SCALE | - |
dc.subject.keywordPlus | FILMS | - |
dc.subject.keywordPlus | TRANSISTOR | - |
dc.subject.keywordPlus | TRANSPORT | - |
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