Controllable and air-stable graphene n-type doping on phosphosilicate glass for intrinsic graphene
- Authors
- Park, Hyung-Youl; Yoon, Jin-Sang; Jeon, Jeaho; Kim, Jinok; Jo, Seo-Hyeon; Yu, Hyun-Yong; Lee, Sungjoo; Park, Jin-Hong
- Issue Date
- 7월-2015
- Publisher
- ELSEVIER SCIENCE BV
- Citation
- ORGANIC ELECTRONICS, v.22, pp.117 - 121
- Indexed
- SCIE
SCOPUS
- Journal Title
- ORGANIC ELECTRONICS
- Volume
- 22
- Start Page
- 117
- End Page
- 121
- URI
- https://scholar.korea.ac.kr/handle/2021.sw.korea/93220
- DOI
- 10.1016/j.orgel.2015.03.039
- ISSN
- 1566-1199
- Abstract
- We proposed and investigated a controllable air-stable graphene n-doping method on phosphosilicate glass (PSG) to achieve intrinsic graphene. Through Raman, XPS, and AFM analyses, it was confirmed that the initially p-type doped graphene was recovered to intrinsic graphene through n-type doping phenomenon. The n-doping control was accomplished by adjusting the concentration of the out-diffused P2O5 molecules from the PSG layer. In particular, a larger amount of P2O5 molecules and a smoother PSG surface were achieved after the higher temperature annealing, consequently yielding a larger doping impact on the graphene layer. Finally, a very small Dirac point shift (1-3 V) was observed after 96 h of air exposure, compared to the degree of shift by the n-doping effect (17-36 V), demonstrating that this n-doping method is fairly stable in air. (C) 2015 Elsevier B.V. All rights reserved.
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