Self-rectifying resistive-switching characteristics with ultralow operating currents in SiOxNy/AlN bilayer devices
DC Field | Value | Language |
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dc.contributor.author | Kwon, Jeong Yong | - |
dc.contributor.author | Park, Ju Hyun | - |
dc.contributor.author | Kim, Tae Geun | - |
dc.date.accessioned | 2021-09-04T15:18:47Z | - |
dc.date.available | 2021-09-04T15:18:47Z | - |
dc.date.created | 2021-06-16 | - |
dc.date.issued | 2015-06-01 | - |
dc.identifier.issn | 0003-6951 | - |
dc.identifier.uri | https://scholar.korea.ac.kr/handle/2021.sw.korea/93304 | - |
dc.description.abstract | We propose a SiOxNy/AlN bilayer resistive switching random access memory scheme to eliminate crosstalk in a crossbar array structure. We demonstrated forming-free self-rectifying behaviors at an ultralow operating current (below 200 nA) by optimizing the current compliance and operating voltage. The set and reset voltages were reduced using a thin AlN layer, and the voltages' on/off ratio and rectifying ratio were as high as 80 and 10(2), respectively. In addition, the device showed an endurance of 10(3) dc cycles and a retention time over 10(5) s. (c) 2015 AIP Publishing LLC. | - |
dc.language | English | - |
dc.language.iso | en | - |
dc.publisher | AMER INST PHYSICS | - |
dc.subject | HIGH-DENSITY | - |
dc.subject | DIODE | - |
dc.title | Self-rectifying resistive-switching characteristics with ultralow operating currents in SiOxNy/AlN bilayer devices | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Kim, Tae Geun | - |
dc.identifier.doi | 10.1063/1.4922252 | - |
dc.identifier.scopusid | 2-s2.0-84930959201 | - |
dc.identifier.wosid | 000355924700052 | - |
dc.identifier.bibliographicCitation | APPLIED PHYSICS LETTERS, v.106, no.22 | - |
dc.relation.isPartOf | APPLIED PHYSICS LETTERS | - |
dc.citation.title | APPLIED PHYSICS LETTERS | - |
dc.citation.volume | 106 | - |
dc.citation.number | 22 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.subject.keywordPlus | HIGH-DENSITY | - |
dc.subject.keywordPlus | DIODE | - |
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