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Self-rectifying resistive-switching characteristics with ultralow operating currents in SiOxNy/AlN bilayer devices

Authors
Kwon, Jeong YongPark, Ju HyunKim, Tae Geun
Issue Date
1-6월-2015
Publisher
AMER INST PHYSICS
Citation
APPLIED PHYSICS LETTERS, v.106, no.22
Indexed
SCIE
SCOPUS
Journal Title
APPLIED PHYSICS LETTERS
Volume
106
Number
22
URI
https://scholar.korea.ac.kr/handle/2021.sw.korea/93304
DOI
10.1063/1.4922252
ISSN
0003-6951
Abstract
We propose a SiOxNy/AlN bilayer resistive switching random access memory scheme to eliminate crosstalk in a crossbar array structure. We demonstrated forming-free self-rectifying behaviors at an ultralow operating current (below 200 nA) by optimizing the current compliance and operating voltage. The set and reset voltages were reduced using a thin AlN layer, and the voltages' on/off ratio and rectifying ratio were as high as 80 and 10(2), respectively. In addition, the device showed an endurance of 10(3) dc cycles and a retention time over 10(5) s. (c) 2015 AIP Publishing LLC.
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공과대학 (전기전자공학부)
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