Purification of CdZnTe by electromigration
- Authors
- Kim, K.; Kim, Sangsu; Hong, Jinki; Lee, Jinseo; Hong, Taekwon; Bolotnikov, A. E.; Camarda, G. S.; James, R. B.
- Issue Date
- 14-4월-2015
- Publisher
- AMER INST PHYSICS
- Citation
- JOURNAL OF APPLIED PHYSICS, v.117, no.14
- Indexed
- SCIE
SCOPUS
- Journal Title
- JOURNAL OF APPLIED PHYSICS
- Volume
- 117
- Number
- 14
- URI
- https://scholar.korea.ac.kr/handle/2021.sw.korea/93843
- DOI
- 10.1063/1.4917460
- ISSN
- 0021-8979
- Abstract
- Electro-migration of ionized/electrically active impurities in CdZnTe (CZT) was successfully demonstrated at elevated temperature with an electric field of 20 V/mm. Copper, which exists in positively charged states, electro-migrated at a speed of 15 mu m/h in an electric field of 20 V/mm. A notable variation in impurity concentration along the growth direction with the segregation tendency of the impurities was observed in an electro-migrated CZT boule. Notably, both Ga and Fe, which exist in positively charged states, exhibited the opposite distribution to that of their segregation tendency in Cd(Zn)Te. A CZT detector fabricated from the middle portion of the electro-migrated CZT boule showed an improved mobility-lifetime product of 0.91 x 10(-2) cm(2)/V, compared with that of 1.4 x 10(-3) cm(2)/V, observed in an as-grown (non-electro-migrated) CZT detector. The optimum radiation detector material would have minimum concentration of deep traps required for compensation. (C) 2015 AIP Publishing LLC.
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Collections - College of Health Sciences > School of Health and Environmental Science > 1. Journal Articles
- College of Science and Technology > Semiconductor Physics in Division of Display and Semiconductor Physics > 1. Journal Articles
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