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D-band Stacked Amplifiers based on SiGe BiCMOS Technology
- Authors
- Yun, Jongwon; Kim, Hyunchul; Song, Kiryong; Rieh, Jae-Sung
- Issue Date
- 4월-2015
- Publisher
- IEEK PUBLICATION CENTER
- Keywords
- Cascode; stacked; common emitter; common-base; D-band; SiGe HBT
- Citation
- JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE, v.15, no.2, pp.276 - 279
- Indexed
- SCIE
SCOPUS
KCI
- Journal Title
- JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE
- Volume
- 15
- Number
- 2
- Start Page
- 276
- End Page
- 279
- ISSN
- 1598-1657
- Abstract
- This paper presents two 3-stage D-band stacked amplifiers developed in a 0.13-mu m SiGe BiCMOS technology, employed to compare the conventional cascode topology and the common-base (CB)/CB stacked topology. AMP1 employs two cascode stages followed by a CB/CB stacked stage, while AMP2 is composed of three CB/CB stacked stages. AMP1 showed a 17.1 dB peak gain at 143.8 GHz and a saturation output power of -4.2 dBm, while AMP2 showed a 20.4 dB peak gain at 150.6 GHz and a saturation output power of -1.3 dBm. The respective power dissipation was 42.9 mW and 59.4 mW for the two amplifiers. The results show that CB/CB stacked topology is favored over cascode topology in terms of gain near 140 GHz.
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