A comparative study of CF4/O-2/Ar and C4F8/O-2/Ar plasmas for dry etching applications
DC Field | Value | Language |
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dc.contributor.author | Chun, Inwoo | - |
dc.contributor.author | Efremov, Alexander | - |
dc.contributor.author | Yeom, Geun Young | - |
dc.contributor.author | Kwon, Kwang-Ho | - |
dc.date.accessioned | 2021-09-04T18:01:21Z | - |
dc.date.available | 2021-09-04T18:01:21Z | - |
dc.date.created | 2021-06-18 | - |
dc.date.issued | 2015-03-31 | - |
dc.identifier.issn | 0040-6090 | - |
dc.identifier.uri | https://scholar.korea.ac.kr/handle/2021.sw.korea/94075 | - |
dc.description.abstract | The effect of the O-2/Ar mixing ratio in CF4/O-2/Ar and C4F8/O-2/Ar inductively coupled plasmas with a 50% fluorocarbon gas content on plasma parameters and active species densities, which influence dry etching mechanisms, was analyzed. The investigation combined plasma diagnostics using Langmuir probes and zero-dimensional plasma modeling. It was found that, in both gas systems, the substitution of Ar for O-2 results in a similar change in the ion energy flux but causes the opposite behavior for the F atom flux. The mechanisms of these phenomena are discussed with regards to plasma chemistry. (C) 2015 Elsevier B.V. All rights reserved. | - |
dc.language | English | - |
dc.language.iso | en | - |
dc.publisher | ELSEVIER SCIENCE SA | - |
dc.subject | INDUCTIVELY-COUPLED PLASMAS | - |
dc.subject | MODEL-BASED ANALYSIS | - |
dc.subject | PROBE MEASUREMENTS | - |
dc.subject | DISCHARGES | - |
dc.subject | KINETICS | - |
dc.subject | DENSITY | - |
dc.subject | SPECTROSCOPY | - |
dc.subject | MECHANISM | - |
dc.subject | CF4/O2 | - |
dc.subject | AR/CF4 | - |
dc.title | A comparative study of CF4/O-2/Ar and C4F8/O-2/Ar plasmas for dry etching applications | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Kwon, Kwang-Ho | - |
dc.identifier.doi | 10.1016/j.tsf.2015.02.060 | - |
dc.identifier.scopusid | 2-s2.0-84926326554 | - |
dc.identifier.wosid | 000352219700022 | - |
dc.identifier.bibliographicCitation | THIN SOLID FILMS, v.579, pp.136 - 143 | - |
dc.relation.isPartOf | THIN SOLID FILMS | - |
dc.citation.title | THIN SOLID FILMS | - |
dc.citation.volume | 579 | - |
dc.citation.startPage | 136 | - |
dc.citation.endPage | 143 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Coatings & Films | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.relation.journalWebOfScienceCategory | Physics, Condensed Matter | - |
dc.subject.keywordPlus | INDUCTIVELY-COUPLED PLASMAS | - |
dc.subject.keywordPlus | MODEL-BASED ANALYSIS | - |
dc.subject.keywordPlus | PROBE MEASUREMENTS | - |
dc.subject.keywordPlus | DISCHARGES | - |
dc.subject.keywordPlus | KINETICS | - |
dc.subject.keywordPlus | DENSITY | - |
dc.subject.keywordPlus | SPECTROSCOPY | - |
dc.subject.keywordPlus | MECHANISM | - |
dc.subject.keywordPlus | CF4/O2 | - |
dc.subject.keywordPlus | AR/CF4 | - |
dc.subject.keywordAuthor | Tetrafluoromethane | - |
dc.subject.keywordAuthor | Perfluorocyclobutane | - |
dc.subject.keywordAuthor | Plasma diagnostics | - |
dc.subject.keywordAuthor | Modeling | - |
dc.subject.keywordAuthor | Reaction kinetics | - |
dc.subject.keywordAuthor | Plasma modeling | - |
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