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A comparative study of CF4/O-2/Ar and C4F8/O-2/Ar plasmas for dry etching applications

Authors
Chun, InwooEfremov, AlexanderYeom, Geun YoungKwon, Kwang-Ho
Issue Date
31-3월-2015
Publisher
ELSEVIER SCIENCE SA
Keywords
Tetrafluoromethane; Perfluorocyclobutane; Plasma diagnostics; Modeling; Reaction kinetics; Plasma modeling
Citation
THIN SOLID FILMS, v.579, pp.136 - 143
Indexed
SCIE
SCOPUS
Journal Title
THIN SOLID FILMS
Volume
579
Start Page
136
End Page
143
URI
https://scholar.korea.ac.kr/handle/2021.sw.korea/94075
DOI
10.1016/j.tsf.2015.02.060
ISSN
0040-6090
Abstract
The effect of the O-2/Ar mixing ratio in CF4/O-2/Ar and C4F8/O-2/Ar inductively coupled plasmas with a 50% fluorocarbon gas content on plasma parameters and active species densities, which influence dry etching mechanisms, was analyzed. The investigation combined plasma diagnostics using Langmuir probes and zero-dimensional plasma modeling. It was found that, in both gas systems, the substitution of Ar for O-2 results in a similar change in the ion energy flux but causes the opposite behavior for the F atom flux. The mechanisms of these phenomena are discussed with regards to plasma chemistry. (C) 2015 Elsevier B.V. All rights reserved.
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