Two 320 GHz Signal Sources Based on SiGe HBT Technology
DC Field | Value | Language |
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dc.contributor.author | Yun, Jongwon | - |
dc.contributor.author | Yoon, Daekeun | - |
dc.contributor.author | Jung, Seungyoon | - |
dc.contributor.author | Kaynak, Mehmet | - |
dc.contributor.author | Tillack, Bernd | - |
dc.contributor.author | Rieh, Jae-Sung | - |
dc.date.accessioned | 2021-09-04T18:44:07Z | - |
dc.date.available | 2021-09-04T18:44:07Z | - |
dc.date.created | 2021-06-15 | - |
dc.date.issued | 2015-03 | - |
dc.identifier.issn | 1531-1309 | - |
dc.identifier.uri | https://scholar.korea.ac.kr/handle/2021.sw.korea/94290 | - |
dc.description.abstract | Two 320 GHz signal sources, a push-push oscillator and an integrated oscillator-doubler, based on a 130 nm SiGe HBT technology are reported. Both signal sources adopt a common-base cross-coupled topology as an oscillator core. The doubler employs a Gm-boosting technique for improved conversion loss. The pushpush oscillator exhibits an output power of 6.3 dBm and a phase noise of -96.6 dBc/Hz at 10 MHz offset. The output power and the phase noise of the integrated oscillator-doubler are 1.6 dBm and -94.7 dBc/Hz at 10 MHz offset, respectively. They dissipate dc power of 101.2 mW and 197.4 mW, leading to DC-to-RF efficiency of 0.2 % and 0.7 %, respectively. | - |
dc.language | English | - |
dc.language.iso | en | - |
dc.publisher | IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC | - |
dc.title | Two 320 GHz Signal Sources Based on SiGe HBT Technology | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Rieh, Jae-Sung | - |
dc.identifier.doi | 10.1109/LMWC.2015.2391011 | - |
dc.identifier.scopusid | 2-s2.0-85027938427 | - |
dc.identifier.wosid | 000351463200012 | - |
dc.identifier.bibliographicCitation | IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS, v.25, no.3, pp.178 - 180 | - |
dc.relation.isPartOf | IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS | - |
dc.citation.title | IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS | - |
dc.citation.volume | 25 | - |
dc.citation.number | 3 | - |
dc.citation.startPage | 178 | - |
dc.citation.endPage | 180 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Engineering | - |
dc.relation.journalWebOfScienceCategory | Engineering, Electrical & Electronic | - |
dc.subject.keywordAuthor | Heterojunction bipolar transistors (HBTs) | - |
dc.subject.keywordAuthor | multiplying circuits | - |
dc.subject.keywordAuthor | oscillators | - |
dc.subject.keywordAuthor | signal generators | - |
dc.subject.keywordAuthor | silicon germanium | - |
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