Two 320 GHz Signal Sources Based on SiGe HBT Technology
- Authors
- Yun, Jongwon; Yoon, Daekeun; Jung, Seungyoon; Kaynak, Mehmet; Tillack, Bernd; Rieh, Jae-Sung
- Issue Date
- 3월-2015
- Publisher
- IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
- Keywords
- Heterojunction bipolar transistors (HBTs); multiplying circuits; oscillators; signal generators; silicon germanium
- Citation
- IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS, v.25, no.3, pp.178 - 180
- Indexed
- SCIE
SCOPUS
- Journal Title
- IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS
- Volume
- 25
- Number
- 3
- Start Page
- 178
- End Page
- 180
- URI
- https://scholar.korea.ac.kr/handle/2021.sw.korea/94290
- DOI
- 10.1109/LMWC.2015.2391011
- ISSN
- 1531-1309
- Abstract
- Two 320 GHz signal sources, a push-push oscillator and an integrated oscillator-doubler, based on a 130 nm SiGe HBT technology are reported. Both signal sources adopt a common-base cross-coupled topology as an oscillator core. The doubler employs a Gm-boosting technique for improved conversion loss. The pushpush oscillator exhibits an output power of 6.3 dBm and a phase noise of -96.6 dBc/Hz at 10 MHz offset. The output power and the phase noise of the integrated oscillator-doubler are 1.6 dBm and -94.7 dBc/Hz at 10 MHz offset, respectively. They dissipate dc power of 101.2 mW and 197.4 mW, leading to DC-to-RF efficiency of 0.2 % and 0.7 %, respectively.
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