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A 0.017 mu J/sample 313 K sample/sec clamped sensing-based time domain CMOS temperature sensor
- Authors
- Park, Se-Chun; Choi, Sung-Dae; Hwang, Hyeonseok; Jo, Byeonghak; Park, Seung-Baek; Kim, Soo-Won
- Issue Date
- 2015
- Publisher
- IEICE-INST ELECTRONICS INFORMATION COMMUNICATIONS ENG
- Keywords
- CMOS temperature sensor; clamped sensing; PTAT; temperature coefficient
- Citation
- IEICE ELECTRONICS EXPRESS, v.12, no.5
- Indexed
- SCIE
SCOPUS
- Journal Title
- IEICE ELECTRONICS EXPRESS
- Volume
- 12
- Number
- 5
- ISSN
- 1349-2543
- Abstract
- This paper describes the design of a CMOS temperature sensor intended to compensate for the thermal effect of NAND Flash cells. The temperature sensor is mainly composed of a SENSOR part and COUNTER part. The SENSOR part generates a pulse (T-PTAT); its width is proportional to absolute temperature (PTAT). Futhermore, the clamped sensing scheme is used to eliminate the effects of temperature and process skew variation of sensing circuits. The COUNTER part converts TPTAT to digital codes. The proposed temperature sensor consumes a 0.017 mu J/sample at a conversion rate of 313 K sample/sec.
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