Low-temperature operation of junctionless nanowire transistors: Less surface roughness scattering effects and dominant scattering mechanisms
DC Field | Value | Language |
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dc.contributor.author | Jeon, Dae-Young | - |
dc.contributor.author | Park, So Jeong | - |
dc.contributor.author | Mouis, Mireille | - |
dc.contributor.author | Barraud, Sylvain | - |
dc.contributor.author | Kim, Gyu-Tae | - |
dc.contributor.author | Ghibaudo, Gerard | - |
dc.date.accessioned | 2021-09-05T01:47:58Z | - |
dc.date.available | 2021-09-05T01:47:58Z | - |
dc.date.created | 2021-06-15 | - |
dc.date.issued | 2014-12-29 | - |
dc.identifier.issn | 0003-6951 | - |
dc.identifier.uri | https://scholar.korea.ac.kr/handle/2021.sw.korea/96444 | - |
dc.description.abstract | The less surface roughness scattering effects, owing to the unique operation principle, in junctionless nanowire transistors (JLT-NW) were shown by low-temperature characterization and 2D numerical simulation results. This feature could allow a better current drive under a high gate bias. In addition, the dominant scattering mechanisms in JLT-NW, with both a short (L-M = 30 nm) and a long channel (L-M = 10 mu m), were investigated through an in-depth study of the temperature dependence of transconductance (g(m)) behavior and compared to conventional inversion-mode nanowire transistors. (C) 2014 AIP Publishing LLC. | - |
dc.language | English | - |
dc.language.iso | en | - |
dc.publisher | AMER INST PHYSICS | - |
dc.subject | ELECTRICAL CHARACTERIZATION | - |
dc.subject | CHANNEL WIDTH | - |
dc.subject | MOSFETS | - |
dc.title | Low-temperature operation of junctionless nanowire transistors: Less surface roughness scattering effects and dominant scattering mechanisms | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Kim, Gyu-Tae | - |
dc.identifier.doi | 10.1063/1.4905366 | - |
dc.identifier.scopusid | 2-s2.0-84949009011 | - |
dc.identifier.wosid | 000347171300044 | - |
dc.identifier.bibliographicCitation | APPLIED PHYSICS LETTERS, v.105, no.26 | - |
dc.relation.isPartOf | APPLIED PHYSICS LETTERS | - |
dc.citation.title | APPLIED PHYSICS LETTERS | - |
dc.citation.volume | 105 | - |
dc.citation.number | 26 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.subject.keywordPlus | ELECTRICAL CHARACTERIZATION | - |
dc.subject.keywordPlus | CHANNEL WIDTH | - |
dc.subject.keywordPlus | MOSFETS | - |
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