Low-temperature operation of junctionless nanowire transistors: Less surface roughness scattering effects and dominant scattering mechanisms
- Authors
- Jeon, Dae-Young; Park, So Jeong; Mouis, Mireille; Barraud, Sylvain; Kim, Gyu-Tae; Ghibaudo, Gerard
- Issue Date
- 29-12월-2014
- Publisher
- AMER INST PHYSICS
- Citation
- APPLIED PHYSICS LETTERS, v.105, no.26
- Indexed
- SCIE
SCOPUS
- Journal Title
- APPLIED PHYSICS LETTERS
- Volume
- 105
- Number
- 26
- URI
- https://scholar.korea.ac.kr/handle/2021.sw.korea/96444
- DOI
- 10.1063/1.4905366
- ISSN
- 0003-6951
- Abstract
- The less surface roughness scattering effects, owing to the unique operation principle, in junctionless nanowire transistors (JLT-NW) were shown by low-temperature characterization and 2D numerical simulation results. This feature could allow a better current drive under a high gate bias. In addition, the dominant scattering mechanisms in JLT-NW, with both a short (L-M = 30 nm) and a long channel (L-M = 10 mu m), were investigated through an in-depth study of the temperature dependence of transconductance (g(m)) behavior and compared to conventional inversion-mode nanowire transistors. (C) 2014 AIP Publishing LLC.
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