300-GHz InP HBT Oscillators Based on Common-Base Cross-Coupled Topology
DC Field | Value | Language |
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dc.contributor.author | Yun, Jongwon | - |
dc.contributor.author | Yoon, Daekeun | - |
dc.contributor.author | Kim, Hyunchul | - |
dc.contributor.author | Rieh, Jae-Sung | - |
dc.date.accessioned | 2021-09-05T02:40:44Z | - |
dc.date.available | 2021-09-05T02:40:44Z | - |
dc.date.created | 2021-06-15 | - |
dc.date.issued | 2014-12 | - |
dc.identifier.issn | 0018-9480 | - |
dc.identifier.uri | https://scholar.korea.ac.kr/handle/2021.sw.korea/96703 | - |
dc.description.abstract | Two fundamental-mode oscillators operating around 300 GHz, a fixed-frequency oscillator and a voltage-controlled oscillator (VCO), have been developed in this work based on a 250-nm InP heterojunction bipolar transistor (HBT) technology. Both oscillators adopted the common-base configuration for the cross-coupled oscillator core, providing higher oscillation frequency compared to the conventional common-emitter cross-coupled topology. The fabricated fixed-frequency oscillator and the VCO exhibited oscillation frequency of 305.8 GHz and 298.1-316.1 GHz (18-GHz tuning range) at dc power dissipation of 87.4 and 88.1 mW, respectively. The phase noise of the fixed-frequency oscillator was measured to be -116.5 dBc/Hz at 10 MHz offset. The peak output power of 5.3 dBm (3.8% dc-to-RF efficiency) and 4.7 dBm (3.2% dc-to-RF efficiency) were respectively achieved for the two oscillators, which are the highest reported power for a transistor-based single oscillator beyond 200 GHz. | - |
dc.language | English | - |
dc.language.iso | en | - |
dc.publisher | IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC | - |
dc.subject | FUNDAMENTAL OSCILLATORS | - |
dc.subject | GHZ | - |
dc.subject | TECHNOLOGY | - |
dc.title | 300-GHz InP HBT Oscillators Based on Common-Base Cross-Coupled Topology | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Rieh, Jae-Sung | - |
dc.identifier.doi | 10.1109/TMTT.2014.2364608 | - |
dc.identifier.scopusid | 2-s2.0-84917734125 | - |
dc.identifier.wosid | 000347015900021 | - |
dc.identifier.bibliographicCitation | IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, v.62, no.12, pp.3053 - 3064 | - |
dc.relation.isPartOf | IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES | - |
dc.citation.title | IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES | - |
dc.citation.volume | 62 | - |
dc.citation.number | 12 | - |
dc.citation.startPage | 3053 | - |
dc.citation.endPage | 3064 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Engineering | - |
dc.relation.journalWebOfScienceCategory | Engineering, Electrical & Electronic | - |
dc.subject.keywordPlus | FUNDAMENTAL OSCILLATORS | - |
dc.subject.keywordPlus | GHZ | - |
dc.subject.keywordPlus | TECHNOLOGY | - |
dc.subject.keywordAuthor | Frequency control | - |
dc.subject.keywordAuthor | heterojunction bipolar transistors (HBT) | - |
dc.subject.keywordAuthor | voltage-controlled oscillators (VCO) | - |
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