300-GHz InP HBT Oscillators Based on Common-Base Cross-Coupled Topology
- Authors
- Yun, Jongwon; Yoon, Daekeun; Kim, Hyunchul; Rieh, Jae-Sung
- Issue Date
- 12월-2014
- Publisher
- IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
- Keywords
- Frequency control; heterojunction bipolar transistors (HBT); voltage-controlled oscillators (VCO)
- Citation
- IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, v.62, no.12, pp.3053 - 3064
- Indexed
- SCIE
SCOPUS
- Journal Title
- IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES
- Volume
- 62
- Number
- 12
- Start Page
- 3053
- End Page
- 3064
- URI
- https://scholar.korea.ac.kr/handle/2021.sw.korea/96703
- DOI
- 10.1109/TMTT.2014.2364608
- ISSN
- 0018-9480
- Abstract
- Two fundamental-mode oscillators operating around 300 GHz, a fixed-frequency oscillator and a voltage-controlled oscillator (VCO), have been developed in this work based on a 250-nm InP heterojunction bipolar transistor (HBT) technology. Both oscillators adopted the common-base configuration for the cross-coupled oscillator core, providing higher oscillation frequency compared to the conventional common-emitter cross-coupled topology. The fabricated fixed-frequency oscillator and the VCO exhibited oscillation frequency of 305.8 GHz and 298.1-316.1 GHz (18-GHz tuning range) at dc power dissipation of 87.4 and 88.1 mW, respectively. The phase noise of the fixed-frequency oscillator was measured to be -116.5 dBc/Hz at 10 MHz offset. The peak output power of 5.3 dBm (3.8% dc-to-RF efficiency) and 4.7 dBm (3.2% dc-to-RF efficiency) were respectively achieved for the two oscillators, which are the highest reported power for a transistor-based single oscillator beyond 200 GHz.
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