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Self-selection bipolar resistive switching phenomena observed in NbON/NbN bilayer for cross-bar array memory applications
- Authors
- Kim, Hee-Dong; Yun, Min Ju; Kim, Tae Geun
- Issue Date
- 24-Nov-2014
- Publisher
- AMER INST PHYSICS
- Citation
- APPLIED PHYSICS LETTERS, v.105, no.21
- Indexed
- SCIE
SCOPUS
- Journal Title
- APPLIED PHYSICS LETTERS
- Volume
- 105
- Number
- 21
- ISSN
- 0003-6951
- Abstract
- In this letter, to integrate bipolar resistive switching cells into cross bar array (CBA) structure, we study one-selector (1S) and one-resistor (1R) behavior of a niobium oxynitride (NbON) and niobium nitride (NbN) bilayer for the applications of resistive random access memory (RRAM). In this structure, a NbN layer exhibits bipolar switching characteristics while a NbON layer acts as the selector. The NbN-based 1S1R devices within a single RRAM memory cell can be directly integrated into a CBA structure without the need of extra diodes; this can significantly reduce the fabrication complexity. (c) 2014 AIP Publishing LLC.
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Related Researcher
- Kim, Tae geun
- College of Engineering (School of Electrical Engineering)