Detailed Information

Cited 0 time in webofscience Cited 0 time in scopus
Metadata Downloads

Self-selection bipolar resistive switching phenomena observed in NbON/NbN bilayer for cross-bar array memory applications

Authors
Kim, Hee-DongYun, Min JuKim, Tae Geun
Issue Date
24-11월-2014
Publisher
AMER INST PHYSICS
Citation
APPLIED PHYSICS LETTERS, v.105, no.21
Indexed
SCIE
SCOPUS
Journal Title
APPLIED PHYSICS LETTERS
Volume
105
Number
21
URI
https://scholar.korea.ac.kr/handle/2021.sw.korea/96740
DOI
10.1063/1.4902969
ISSN
0003-6951
Abstract
In this letter, to integrate bipolar resistive switching cells into cross bar array (CBA) structure, we study one-selector (1S) and one-resistor (1R) behavior of a niobium oxynitride (NbON) and niobium nitride (NbN) bilayer for the applications of resistive random access memory (RRAM). In this structure, a NbN layer exhibits bipolar switching characteristics while a NbON layer acts as the selector. The NbN-based 1S1R devices within a single RRAM memory cell can be directly integrated into a CBA structure without the need of extra diodes; this can significantly reduce the fabrication complexity. (c) 2014 AIP Publishing LLC.
Files in This Item
There are no files associated with this item.
Appears in
Collections
College of Engineering > School of Electrical Engineering > 1. Journal Articles

qrcode

Items in ScholarWorks are protected by copyright, with all rights reserved, unless otherwise indicated.

Related Researcher

Researcher Kim, Tae geun photo

Kim, Tae geun
공과대학 (전기전자공학부)
Read more

Altmetrics

Total Views & Downloads

BROWSE