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Improvement of blue InGaN/GaN light-emitting diodes with graded indium composition wells and barriers
- Issue Date
- 15-11월-2014
- Publisher
- ELSEVIER SCIENCE BV
- Keywords
- Efficiency droop; Light-emitting diodes; Numerical simulation; Internal quantum efficiency; Quantum well and barrier
- Citation
- OPTICS COMMUNICATIONS, v.331, pp.282 - 286
- Indexed
- SCIE
SCOPUS
- Journal Title
- OPTICS COMMUNICATIONS
- Volume
- 331
- Start Page
- 282
- End Page
- 286
- ISSN
- 0030-4018
- Abstract
- We present a numerical study on the effect of graded indium Well and barrier structures having different compositions in InGaN/GaN-based light-emitting diodes (LEDs) on their optical and electrical properties. Compared with conventional LEDs, the output power of the proposed LEDs was found to increase by a factor of similar to 2.4, and the efficiency droop reduced greatly. In addition, the turn-on voltage was reduced by using an InGaN well and barrier structure having a graded indium composition. These improvements are believed to result from the enhancement in the hole-injection efficiency, as well as the spatial distribution overlap between the electrons and holes in multiple quantum wells. (C) 2014 Elsevier B.V. All rights reserved.
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