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Specific Contact Resistivity Reduction Through Ar Plasma-Treated TiO2-x Interfacial Layer to Metal/Ge Contact
- Authors
- Kim, Gwang-Sik; Kim, Jeong-Kyu; Kim, Seung-Hwan; Jo, Jaesung; Shin, Changhwan; Park, Jin-Hong; Saraswat, Krishna C.; Yu, Hyun-Yong
- Issue Date
- 11월-2014
- Publisher
- IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
- Keywords
- Ar plasma; Fermi-level unpinning; germanium; specific contact resistivity; titanium dioxide
- Citation
- IEEE ELECTRON DEVICE LETTERS, v.35, no.11, pp.1076 - 1078
- Indexed
- SCIE
SCOPUS
- Journal Title
- IEEE ELECTRON DEVICE LETTERS
- Volume
- 35
- Number
- 11
- Start Page
- 1076
- End Page
- 1078
- ISSN
- 0741-3106
- Abstract
- We demonstrate contact resistivity reduction by inserting an Ar plasma-treated TiO2-x heavily doped interfacial layer to metal/semiconductor contact to overcome a Fermi-level pinning problem on germanium (Ge). A specific contact resistivity of 3.16x10(-3) Omega.cm(2) on moderately doped n-type Ge substrate (6 x 10(16)cm(-3)) was achieved, exhibiting x584 reduction from Ti/Ge structure, and x11 reduction from Ti/undoped TiO2/Ge structure. A novel doping technique for TiO2 interfacial layer at low temperature using Ar plasma was presented to lower S/D contact resistance in Ge n-MOSFET.
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