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A Short-Channel TFT of Amorphous In-Ga-Zn-O Semiconductor Pixel Structure With Advanced Five-Mask Process
- Authors
- Yang, Joon-Young; Jung, Sung-Hoon; Woo, Chang-Seung; Lee, Ju-Hyun; Park, Jung-Ho; Jun, Myung-Chul; Kang, In-Byeong; Yeo, Sang-Deog
- Issue Date
- Oct-2014
- Publisher
- IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
- Keywords
- a-IGZO; AMOLED; etch-stopper; LCD; oxide semiconductor; short channel
- Citation
- IEEE ELECTRON DEVICE LETTERS, v.35, no.10, pp.1043 - 1045
- Indexed
- SCIE
SCOPUS
- Journal Title
- IEEE ELECTRON DEVICE LETTERS
- Volume
- 35
- Number
- 10
- Start Page
- 1043
- End Page
- 1045
- ISSN
- 0741-3106
- Abstract
- We propose a new five-mask etch-stopper amorphous In-Ga-Zn-O semiconductor pixel structure for a high-resolution advanced-high-performance in-plane-switching (AH-IPS) display device. A short-channel length (under 5 mu m) thin-film transistor (TFT) was successfully fabricated using a self-aligned damage preventing layer. The linear field effect mobility of the 4-mu m channel length TFT was 10.4 cm(2)/V.s. Using the proposed structure, we successfully fabricated a 9.7-in AH-IPS quad-extended graphics array liquid-crystal displays panel.
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Collections - College of Engineering > School of Electrical Engineering > 1. Journal Articles
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