Electrical percolation characteristics of metallic single-walled carbon nanotube networks by vacancy evolution
- Authors
- Kim, Do-Hyun; Jin, Jun Eon; Piao, Mingxing; Choi, Jun Hee; Kim, Gyu Tae
- Issue Date
- 14-9월-2014
- Publisher
- ROYAL SOC CHEMISTRY
- Citation
- PHYSICAL CHEMISTRY CHEMICAL PHYSICS, v.16, no.34, pp.18370 - 18374
- Indexed
- SCIE
SCOPUS
- Journal Title
- PHYSICAL CHEMISTRY CHEMICAL PHYSICS
- Volume
- 16
- Number
- 34
- Start Page
- 18370
- End Page
- 18374
- URI
- https://scholar.korea.ac.kr/handle/2021.sw.korea/97400
- DOI
- 10.1039/c4cp02337d
- ISSN
- 1463-9076
- Abstract
- In the present study, we demonstrate the effect of vacancy evolution on high-pure metallic single-walled carbon nanotube (m-SWCNT) networks by observing the electrical characteristics of the networks on the field-effect transistor (FET). By catalytic oxidation using Co catalyst, vacancy evolution was gradually realized in high-pure m-SWCNT formed as networks between source-drain electrodes of FET. The evolution of vacancy defects in the m-SWCNT networks gradually proceeded by heating FET several times at 250 degrees C in air. Atomic force microscopic images showed the presence of the Co catalyst nanoparticles, which were evenly formed in the m-SWCNT networks between the electrodes of FET. Vacancy evolution was confirmed by monitoring the D- and G-bands in the Raman spectra measured from the networks after every step of the catalytic oxidation. With vacancy evolution in the networks, the D-band gradually increased, and the transconductance of m-SWCNT networks drastically decreased. In addition, the metallic behaviour of the m-SWCNT networks was converted into a semiconducting one with an on/off ratio of 2.7.
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