Detailed Information
Cited 0 time in 
Cited 0 time in 
Cited 0 time in
Metadata Downloads
Properties of boron-rich layer formed by boron diffusion in n-type silicon
- Authors
- Kim, Chanseok; Park, Sungeun; Do Kim, Young; Park, Hyomin; Kim, Seongtak; Kim, Hyunho; Lee, Hae-seok; Kim, Donghwan
- Issue Date
- 1-8월-2014
- Publisher
- ELSEVIER SCIENCE SA
- Keywords
- n-Type silicon; Boron emitter; Boron-rich layer; Material property
- Citation
- THIN SOLID FILMS, v.564, pp.253 - 257
- Indexed
- SCIE
SCOPUS
- Journal Title
- THIN SOLID FILMS
- Volume
- 564
- Start Page
- 253
- End Page
- 257
- ISSN
- 0040-6090
- Abstract
- A boron-rich layer (BRL) is formed during the boron diffusion process in fabricating crystalline Si solar cells. We investigated the structural, optical, and electrical characteristics of BRL in n-type silicon. A boron emitter was formed using the BBr3 liquid source in a tube furnace at 950 degrees C. BRL had an amorphous phase. The peak concentration of boron in BRL was over 10(23) atoms/cm(3). BRL consisted of boron, silicon, and oxygen. The oxygen atoms seemed to have caused the formation of amorphous phase. BRL showed the refractive indices of 15-2.0, and the contact resistance of 0.8 m Omega cm(2). (C) 2014 Published by Elsevier B.V.
- Files in This Item
- There are no files associated with this item.
Items in ScholarWorks are protected by copyright, with all rights reserved, unless otherwise indicated.