Observation of ferromagnetic semiconductor behavior in manganese-oxide doped graphene
- Authors
- Park, Chang-Soo; Zhao, Yu; Shon, Yoon; Yoon, Chong S.; Lee, Haigun; Lee, Cheol Jin
- Issue Date
- 8월-2014
- Publisher
- AMER INST PHYSICS
- Citation
- AIP ADVANCES, v.4, no.8
- Indexed
- SCIE
SCOPUS
- Journal Title
- AIP ADVANCES
- Volume
- 4
- Number
- 8
- URI
- https://scholar.korea.ac.kr/handle/2021.sw.korea/97734
- DOI
- 10.1063/1.4893240
- ISSN
- 2158-3226
- Abstract
- We have doped manganese-oxide onto graphene by an electrochemical method. Graphene showed a clear ferromagnetic semiconductor behavior after doping of manganese-oxide. The manganese-oxide doped graphene has a coercive field (Hc) of 232 Oe at 10 K, and has the Curie temperature of 270 K from the temperature-dependent resistivity using transport measurement system. The ferromagnetism of manganese-oxide doped graphene attributes to the double-exchange from the coexistence of Mn3+ and Mn4+ on the surface of graphene. In addition, the semiconducting behavior is caused by the formation of manganese-oxide on graphene. (C) 2014 Author(s). All article content, except where otherwise noted, is licensed under a Creative Commons Attribution 3.0 Unported License.
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Collections - College of Engineering > Department of Materials Science and Engineering > 1. Journal Articles
- College of Engineering > School of Electrical Engineering > 1. Journal Articles
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