A 200 GHz Heterodyne Image Receiver With an Integrated VCO in a SiGe BiCMOS Technology
- Authors
- Yoon, Daekeun; Rieh, Jae-Sung
- Issue Date
- 8월-2014
- Publisher
- IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
- Keywords
- Bipolar integrated circuit; heterojunction bipolar transistors; imaging; receivers
- Citation
- IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS, v.24, no.8, pp.557 - 559
- Indexed
- SCIE
SCOPUS
- Journal Title
- IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS
- Volume
- 24
- Number
- 8
- Start Page
- 557
- End Page
- 559
- URI
- https://scholar.korea.ac.kr/handle/2021.sw.korea/97856
- DOI
- 10.1109/LMWC.2014.2324177
- ISSN
- 1531-1309
- Abstract
- A 200 GHz heterodyne image receiver consisting of a mixer integrated with an on-chip voltage controlled oscillator (VCO) has been developed in a 0.18 mu m SiGe BiCMOS technology. Incoming signals near 200 GHz are down-converted by the 3rd-order subharmonic mixer with V-band local oscillator (LO) pumping, which is provided by the Colpitts VCO with a stacked common-base buffer. The measured minimum conversion loss is 11.5 dB at 196 GHz with an input 1 db compression point (P-1 (dB)) of -13 dBm. The fabricated chip with an area of 600 x 400 mu m(2) including pads consumes total DC power of 25.5 mW. A two-dimensional 200 GHz image acquired with the receiver is presented to demonstrate its imaging application.
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