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A 200 GHz Heterodyne Image Receiver With an Integrated VCO in a SiGe BiCMOS Technology

Authors
Yoon, DaekeunRieh, Jae-Sung
Issue Date
8월-2014
Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
Keywords
Bipolar integrated circuit; heterojunction bipolar transistors; imaging; receivers
Citation
IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS, v.24, no.8, pp.557 - 559
Indexed
SCIE
SCOPUS
Journal Title
IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS
Volume
24
Number
8
Start Page
557
End Page
559
URI
https://scholar.korea.ac.kr/handle/2021.sw.korea/97856
DOI
10.1109/LMWC.2014.2324177
ISSN
1531-1309
Abstract
A 200 GHz heterodyne image receiver consisting of a mixer integrated with an on-chip voltage controlled oscillator (VCO) has been developed in a 0.18 mu m SiGe BiCMOS technology. Incoming signals near 200 GHz are down-converted by the 3rd-order subharmonic mixer with V-band local oscillator (LO) pumping, which is provided by the Colpitts VCO with a stacked common-base buffer. The measured minimum conversion loss is 11.5 dB at 196 GHz with an input 1 db compression point (P-1 (dB)) of -13 dBm. The fabricated chip with an area of 600 x 400 mu m(2) including pads consumes total DC power of 25.5 mW. A two-dimensional 200 GHz image acquired with the receiver is presented to demonstrate its imaging application.
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Rieh, Jae Sung
공과대학 (전기전자공학부)
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