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A 248-262 GHz InP HBT VCO with Interesting Tuning Behavior
- Issue Date
- 8월-2014
- Publisher
- IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
- Keywords
- Frequency control; heterojunction bipolar transistors (HBT); voltage-controlled oscillators (VCO)
- Citation
- IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS, v.24, no.8, pp.560 - 562
- Indexed
- SCIE
SCOPUS
- Journal Title
- IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS
- Volume
- 24
- Number
- 8
- Start Page
- 560
- End Page
- 562
- ISSN
- 1531-1309
- Abstract
- A fundamental-mode common-base voltage-controlled oscillator (VCO) based on 250-nm InP heterojunction bipolar transistor (HBT) technology is reported. The VCO, which employs varactors implemented by connecting the base and emitter of npn transistors as tuning components, shows a tuning range of 247.8-262.2 GHz. The output power is greater than 0 dBm over the entire tuning range, and dissipated dc power is around 85 mW. An unexpected tuning behavior was observed, which was shown to arise from the internal parasitic base inductance of the transistors used for varactors in this work.
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