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Highly transparent conductive Ag/Ga2O3 electrode for near-ultraviolet light-emitting diodes
- Issue Date
- Aug-2014
- Publisher
- WILEY-V C H VERLAG GMBH
- Keywords
- Ga2O3; light-emitting diodes; silver; transparent conductive electrodes
- Citation
- PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, v.211, no.8, pp.1760 - 1763
- Indexed
- SCIE
SCOPUS
- Volume
- 211
- Number
- 8
- Start Page
- 1760
- End Page
- 1763
- ISSN
- 1862-6300
- Abstract
- We fabricated an Ag/Ga2O3 bilayer as a highly transparent conductive electrode for near-ultraviolet (NUV) light-emitting diodes (LEDs). The bilayer showed nonohmic characteristics because the as-deposited Ga2O3 film is an insulator. However, the bilayer thermally annealed in ambient air and N-2 at 550 degrees C for 1 min showed ohmic-like current-voltage characteristics including specific contact resistances of 3.06 x 10(-2) and 7.34 x 10(-2) Omega cm(2), respectively. The optical transmittance and sheet resistance of the bilayer were about 91% and <42 Omega/square at 380 nm. The results suggest that the Ag/Ga2O3 bilayer is suitable for application as a p-type electrode in NUV-LEDs. (C) 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
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Related Researcher
- Kim, Tae geun
- College of Engineering (School of Electrical Engineering)