ZnO nanowire field-effect transistors with Pt nanocrystals fabricated on a flexible plastic substrate for a non-volatile memory application
DC Field | Value | Language |
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dc.contributor.author | Lee, Myeongwon | - |
dc.contributor.author | Jeon, Youngin | - |
dc.contributor.author | Kim, Sangsig | - |
dc.date.accessioned | 2021-09-05T06:41:10Z | - |
dc.date.available | 2021-09-05T06:41:10Z | - |
dc.date.created | 2021-06-15 | - |
dc.date.issued | 2014-08 | - |
dc.identifier.issn | 1862-6300 | - |
dc.identifier.uri | https://scholar.korea.ac.kr/handle/2021.sw.korea/97911 | - |
dc.description.abstract | In this work, a single ZnO nanowire field-effect transistor (NWFET) with discrete-trap storage nodes of Pt nanocrystals (NCs) embedded within Al2O3, a high-kappa tunneling/control dielectric material, was successfully fabricated on a flexible plastic substrate for a non-volatile memory application. The ZnO NWFET with embedded Pt NCs exhibits a clear hysteresis loop with a threshold voltage shift of 4.16V under the +/- 15V gate-source voltage sweep ranges, implying that the charging and discharging phenomena occur during the program/erase operations. The ZnO NWFET achieves a reasonable value of approximately 10(5) for the on/off current ratio for read-out of storage data. Furthermore, memory features, such as programming efficiency and on-cell current, are compared between the flat and convexly bent states in order to investigate the feasibility of flexible plastic devices as transistors. (C) 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim | - |
dc.language | English | - |
dc.language.iso | en | - |
dc.publisher | WILEY-V C H VERLAG GMBH | - |
dc.subject | SILICON NANOCRYSTALS | - |
dc.subject | INTERFERENCE | - |
dc.subject | ELECTRONICS | - |
dc.subject | INTEGRATION | - |
dc.title | ZnO nanowire field-effect transistors with Pt nanocrystals fabricated on a flexible plastic substrate for a non-volatile memory application | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Kim, Sangsig | - |
dc.identifier.doi | 10.1002/pssa.201330499 | - |
dc.identifier.wosid | 000340521000041 | - |
dc.identifier.bibliographicCitation | PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, v.211, no.8, pp.1912 - 1916 | - |
dc.relation.isPartOf | PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE | - |
dc.citation.title | PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE | - |
dc.citation.volume | 211 | - |
dc.citation.number | 8 | - |
dc.citation.startPage | 1912 | - |
dc.citation.endPage | 1916 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.relation.journalWebOfScienceCategory | Physics, Condensed Matter | - |
dc.subject.keywordPlus | SILICON NANOCRYSTALS | - |
dc.subject.keywordPlus | INTERFERENCE | - |
dc.subject.keywordPlus | ELECTRONICS | - |
dc.subject.keywordPlus | INTEGRATION | - |
dc.subject.keywordAuthor | flexible substrates | - |
dc.subject.keywordAuthor | nanocrystals | - |
dc.subject.keywordAuthor | nanowires | - |
dc.subject.keywordAuthor | non-volatile memory | - |
dc.subject.keywordAuthor | platinum | - |
dc.subject.keywordAuthor | ZnO | - |
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