ZnO nanowire field-effect transistors with Pt nanocrystals fabricated on a flexible plastic substrate for a non-volatile memory application
- Authors
- Lee, Myeongwon; Jeon, Youngin; Kim, Sangsig
- Issue Date
- 8월-2014
- Publisher
- WILEY-V C H VERLAG GMBH
- Keywords
- flexible substrates; nanocrystals; nanowires; non-volatile memory; platinum; ZnO
- Citation
- PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, v.211, no.8, pp.1912 - 1916
- Indexed
- SCIE
SCOPUS
- Journal Title
- PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE
- Volume
- 211
- Number
- 8
- Start Page
- 1912
- End Page
- 1916
- URI
- https://scholar.korea.ac.kr/handle/2021.sw.korea/97911
- DOI
- 10.1002/pssa.201330499
- ISSN
- 1862-6300
- Abstract
- In this work, a single ZnO nanowire field-effect transistor (NWFET) with discrete-trap storage nodes of Pt nanocrystals (NCs) embedded within Al2O3, a high-kappa tunneling/control dielectric material, was successfully fabricated on a flexible plastic substrate for a non-volatile memory application. The ZnO NWFET with embedded Pt NCs exhibits a clear hysteresis loop with a threshold voltage shift of 4.16V under the +/- 15V gate-source voltage sweep ranges, implying that the charging and discharging phenomena occur during the program/erase operations. The ZnO NWFET achieves a reasonable value of approximately 10(5) for the on/off current ratio for read-out of storage data. Furthermore, memory features, such as programming efficiency and on-cell current, are compared between the flat and convexly bent states in order to investigate the feasibility of flexible plastic devices as transistors. (C) 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
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