Germanium p-i-n avalanche photodetector fabricated by point defect healing process
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Shim, Jaewoo | - |
dc.contributor.author | Kang, Dong-Ho | - |
dc.contributor.author | Yoo, Gwangwe | - |
dc.contributor.author | Hong, Seong-Taek | - |
dc.contributor.author | Jung, Woo-Shik | - |
dc.contributor.author | Kuh, Bong Jin | - |
dc.contributor.author | Lee, Beomsuk | - |
dc.contributor.author | Shin, Dongjae | - |
dc.contributor.author | Ha, Kyoungho | - |
dc.contributor.author | Kim, Gwang Sik | - |
dc.contributor.author | Yu, Hyun-Yong | - |
dc.contributor.author | Baek, Jungwoo | - |
dc.contributor.author | Park, Jin-Hong | - |
dc.date.accessioned | 2021-09-05T07:04:04Z | - |
dc.date.available | 2021-09-05T07:04:04Z | - |
dc.date.created | 2021-06-15 | - |
dc.date.issued | 2014-07-15 | - |
dc.identifier.issn | 0146-9592 | - |
dc.identifier.uri | https://scholar.korea.ac.kr/handle/2021.sw.korea/97963 | - |
dc.description.abstract | In this Letter, we report Ge p-i-n avalanche photodetectors (APD) with low dark current (sub 1 mu A below V-R = 5 V), low operating voltage (avalanche breakdown voltage = 8-13 V), and high multiplication gain (440-680) by exploiting a point defect healing method (between 600 degrees C and 650 degrees C) and optimizing the doping concentration of the intrinsic region (p-type similar to 10(17) cm(-3)). In addition, Raman spectroscopy and electrochemical capacitance voltage analyses were performed to investigate the junction interfaces in more detail. This successful demonstration of Ge p-i-n APD with low dark current, low operating voltage, and high gain is promising for low-power and high-sensitivity Ge PD applications. (C) 2014 Optical Society of America | - |
dc.language | English | - |
dc.language.iso | en | - |
dc.publisher | OPTICAL SOC AMER | - |
dc.title | Germanium p-i-n avalanche photodetector fabricated by point defect healing process | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Yu, Hyun-Yong | - |
dc.identifier.doi | 10.1364/OL.39.004204 | - |
dc.identifier.scopusid | 2-s2.0-84904512036 | - |
dc.identifier.wosid | 000338934100037 | - |
dc.identifier.bibliographicCitation | OPTICS LETTERS, v.39, no.14, pp.4204 - 4207 | - |
dc.relation.isPartOf | OPTICS LETTERS | - |
dc.citation.title | OPTICS LETTERS | - |
dc.citation.volume | 39 | - |
dc.citation.number | 14 | - |
dc.citation.startPage | 4204 | - |
dc.citation.endPage | 4207 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Optics | - |
dc.relation.journalWebOfScienceCategory | Optics | - |
Items in ScholarWorks are protected by copyright, with all rights reserved, unless otherwise indicated.
145 Anam-ro, Seongbuk-gu, Seoul, 02841, Korea+82-2-3290-2963
COPYRIGHT © 2021 Korea University. All Rights Reserved.
Certain data included herein are derived from the © Web of Science of Clarivate Analytics. All rights reserved.
You may not copy or re-distribute this material in whole or in part without the prior written consent of Clarivate Analytics.