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Germanium p-i-n avalanche photodetector fabricated by point defect healing process

Authors
Shim, JaewooKang, Dong-HoYoo, GwangweHong, Seong-TaekJung, Woo-ShikKuh, Bong JinLee, BeomsukShin, DongjaeHa, KyounghoKim, Gwang SikYu, Hyun-YongBaek, JungwooPark, Jin-Hong
Issue Date
15-7월-2014
Publisher
OPTICAL SOC AMER
Citation
OPTICS LETTERS, v.39, no.14, pp.4204 - 4207
Indexed
SCIE
SCOPUS
Journal Title
OPTICS LETTERS
Volume
39
Number
14
Start Page
4204
End Page
4207
URI
https://scholar.korea.ac.kr/handle/2021.sw.korea/97963
DOI
10.1364/OL.39.004204
ISSN
0146-9592
Abstract
In this Letter, we report Ge p-i-n avalanche photodetectors (APD) with low dark current (sub 1 mu A below V-R = 5 V), low operating voltage (avalanche breakdown voltage = 8-13 V), and high multiplication gain (440-680) by exploiting a point defect healing method (between 600 degrees C and 650 degrees C) and optimizing the doping concentration of the intrinsic region (p-type similar to 10(17) cm(-3)). In addition, Raman spectroscopy and electrochemical capacitance voltage analyses were performed to investigate the junction interfaces in more detail. This successful demonstration of Ge p-i-n APD with low dark current, low operating voltage, and high gain is promising for low-power and high-sensitivity Ge PD applications. (C) 2014 Optical Society of America
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공과대학 (전기전자공학부)
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