Resistive switching characteristics of polycrystalline SrTiO3 films
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Choi, Hyung Jong | - |
dc.contributor.author | Park, Suk Won | - |
dc.contributor.author | Han, Gwon Deok | - |
dc.contributor.author | Na, Junhong | - |
dc.contributor.author | Kim, Gyu-Tae | - |
dc.contributor.author | Shim, Joon Hyung | - |
dc.date.accessioned | 2021-09-05T07:51:05Z | - |
dc.date.available | 2021-09-05T07:51:05Z | - |
dc.date.created | 2021-06-15 | - |
dc.date.issued | 2014-06-16 | - |
dc.identifier.issn | 0003-6951 | - |
dc.identifier.uri | https://scholar.korea.ac.kr/handle/2021.sw.korea/98216 | - |
dc.description.abstract | Strontium titanate (STO) thin films 90 nm in thickness were grown on a Pt substrate through atomic layer deposition (ALD). The as-deposited ALD STO grown with an ALD cycle ratio of 1:1 (Sr:Ti) was in an amorphous phase, and annealing at 800 degrees C in air crystallized the films into the perovskite phase. This phase change was confirmed by x-ray diffraction and transmission electron microscopy. The as-deposited ALD STO exhibited no discernible switching mechanism, whereas unipolar switching behavior was reproducibly observed with a high resistance ratio (10(8)-10(9)) and strict separation of the set/reset voltages and currents in the annealed ALD STO. Mechanisms for charge transport in both the low- and high-resistance states and for resistive switching in the annealed ALD STO are also proposed. (C) 2014 AIP Publishing LLC. | - |
dc.language | English | - |
dc.language.iso | en | - |
dc.publisher | AMER INST PHYSICS | - |
dc.subject | ATOMIC LAYER DEPOSITION | - |
dc.subject | THIN-FILMS | - |
dc.subject | RESISTANCE | - |
dc.title | Resistive switching characteristics of polycrystalline SrTiO3 films | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Kim, Gyu-Tae | - |
dc.contributor.affiliatedAuthor | Shim, Joon Hyung | - |
dc.identifier.doi | 10.1063/1.4883646 | - |
dc.identifier.scopusid | 2-s2.0-84903211254 | - |
dc.identifier.wosid | 000337915000035 | - |
dc.identifier.bibliographicCitation | APPLIED PHYSICS LETTERS, v.104, no.24 | - |
dc.relation.isPartOf | APPLIED PHYSICS LETTERS | - |
dc.citation.title | APPLIED PHYSICS LETTERS | - |
dc.citation.volume | 104 | - |
dc.citation.number | 24 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.subject.keywordPlus | ATOMIC LAYER DEPOSITION | - |
dc.subject.keywordPlus | THIN-FILMS | - |
dc.subject.keywordPlus | RESISTANCE | - |
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