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Resistive switching characteristics of polycrystalline SrTiO3 films

Authors
Choi, Hyung JongPark, Suk WonHan, Gwon DeokNa, JunhongKim, Gyu-TaeShim, Joon Hyung
Issue Date
16-6월-2014
Publisher
AMER INST PHYSICS
Citation
APPLIED PHYSICS LETTERS, v.104, no.24
Indexed
SCIE
SCOPUS
Journal Title
APPLIED PHYSICS LETTERS
Volume
104
Number
24
URI
https://scholar.korea.ac.kr/handle/2021.sw.korea/98216
DOI
10.1063/1.4883646
ISSN
0003-6951
Abstract
Strontium titanate (STO) thin films 90 nm in thickness were grown on a Pt substrate through atomic layer deposition (ALD). The as-deposited ALD STO grown with an ALD cycle ratio of 1:1 (Sr:Ti) was in an amorphous phase, and annealing at 800 degrees C in air crystallized the films into the perovskite phase. This phase change was confirmed by x-ray diffraction and transmission electron microscopy. The as-deposited ALD STO exhibited no discernible switching mechanism, whereas unipolar switching behavior was reproducibly observed with a high resistance ratio (10(8)-10(9)) and strict separation of the set/reset voltages and currents in the annealed ALD STO. Mechanisms for charge transport in both the low- and high-resistance states and for resistive switching in the annealed ALD STO are also proposed. (C) 2014 AIP Publishing LLC.
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